Optical detection of biatomic sheets of silicon in Si/Ge superlattices

A distinctive Raman spectrum associated with biatomic sheets of silicon in Si/Ge superlattices has been found in the energy range 370–410 cm−1. This double-peaked structure was obtained over an order of magnitude of germanium layer thickness, but was not found in the alloy control layers or structur...

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Bibliographic Details
Published in:Applied physics letters 1990-10, Vol.57 (15), p.1523-1525
Main Authors: WHITE, J. D, FASOL, G, GHANBARI, R. A, GELL, M. A, GIBBINGS, C. J, TUPPEN, C. G
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:A distinctive Raman spectrum associated with biatomic sheets of silicon in Si/Ge superlattices has been found in the energy range 370–410 cm−1. This double-peaked structure was obtained over an order of magnitude of germanium layer thickness, but was not found in the alloy control layers or structures with thicker Si layers. It is proposed that the signal is due to modes that are normally forbidden in this scattering configuration. Strong direct optical transitions have been predicted for certain Si/Ge superlattices incorporating biatomic sheets of Si and this distinctive Raman signal could be used to characterize the biatomic sheets of silicon in these structures.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.104092