YBa2Cu3O7-δ-Ag-Al/Al2O3/Pb tunnel junctions based on the superconducting proximity effect

YBa2Cu3O7−δ-Ag-Al/Al2O3/Pb superconducting tunnel junctions with high subgap resistance were fabricated using the proximity effect induced superconductivity in the Ag-Al layer by the YBa2Cu3O7−δ film. At low temperature an energy gap of 9–10 meV is found to be induced in the aluminum layer. Above 20...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1990-12, Vol.57 (24), p.2600-2602
Main Authors: GIJS, M. A. M, SCHOLTEN, D, VAN ROOY, T, GERRITS, A. M
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Physics
Proximity effects, weak links, tunneling phenomena, and josephson effects, adreev effect, sn and sns junctions
Superconductivity
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:YBa2Cu3O7−δ-Ag-Al/Al2O3/Pb superconducting tunnel junctions with high subgap resistance were fabricated using the proximity effect induced superconductivity in the Ag-Al layer by the YBa2Cu3O7−δ film. At low temperature an energy gap of 9–10 meV is found to be induced in the aluminum layer. Above 20 K the induced gap disappears mainly due to the decreased normal metal coherence length. At higher voltages (V≤120 meV) the dynamic conductance dI/dV∝V, characteristic for the normal tunneling density of states of the oxide superconductor.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.104186