Pressure-dependent transition in the mechanism of remote plasma SiN x deposition

Optical emission properties in remote plasma deposition of SiNx from an N2 electron cyclotron resonance microwave plasma and SiH4 have been investigated over a pressure range of 0.002–0.3 Torr. The deposition process divides into three pressure regions. For p≳0.1 Torr, film deposition results from g...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1990-08, Vol.57 (8), p.762-764
Main Authors: Meikle, Scott, Hatanaka, Yoshinori
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Optical emission properties in remote plasma deposition of SiNx from an N2 electron cyclotron resonance microwave plasma and SiH4 have been investigated over a pressure range of 0.002–0.3 Torr. The deposition process divides into three pressure regions. For p≳0.1 Torr, film deposition results from gas phase reactions between active nitrogen and SiH4. For p
ISSN:0003-6951
1077-3118
DOI:10.1063/1.104259