High-efficiency InGaAlP/GaAs visible light-emitting diodes

High-efficiency InGaAlP surface emission light emitting diodes (LEDs) have been successfully fabricated. Newly designed double-heterostructure LEDs with a GaAlAs current spreading layer were employed to expand the light emission area, which is necessary to take out the light efficiently. The externa...

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Bibliographic Details
Published in:Applied physics letters 1991-03, Vol.58 (10), p.1010-1012
Main Authors: SUGAWARA, H, ISHIKAWA, M, HATAKOSHI, G
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Optics
Physics
Wave optics
Wave propagation, transmission and absorption
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Summary:High-efficiency InGaAlP surface emission light emitting diodes (LEDs) have been successfully fabricated. Newly designed double-heterostructure LEDs with a GaAlAs current spreading layer were employed to expand the light emission area, which is necessary to take out the light efficiently. The external quantum efficiency was 1.5% at 620 nm orange light for an In0.5 (Ga0.8Al0.2)0.5P active layer LED. This LED is five times more efficient at 620 nm than that of the GaAlAs and GaAsP LEDs. 563 nm green electroluminescence, which is the shortest wavelength ever reported for InGaAlP LEDs, was also achieved with an In0.5(Ga0.5Al0.5)0.5P active layer.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.104407