Contour photoetching of n-type semiconductors

In wet photoetching of semiconductors with a projected beam on a large surface the kinetics are limited by the dissolution of reaction products at high light intensities. The structures obtained after prolonged etching are of no practical use. For short etching times, however, it is shown that in sp...

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Bibliographic Details
Published in:Applied physics letters 1991-02, Vol.58 (8), p.831-833
Main Authors: VAN DE VEN, J, NABBEN, H. J. P
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Crystalline state (including molecular motions in solids)
Exact sciences and technology
Physics
Structure of solids and liquids
crystallography
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Summary:In wet photoetching of semiconductors with a projected beam on a large surface the kinetics are limited by the dissolution of reaction products at high light intensities. The structures obtained after prolonged etching are of no practical use. For short etching times, however, it is shown that in specific etchants the contour of the projected beam can be etched, whereas the central part remains comparatively passive with an etch rate which is at least ten times lower. With this maskless method, narrow grooves can be produced which are interesting for isolation of specific areas of a wafer. The method is discussed and the mechanism explained in detail for n-GaAs in H2O2/H2SO4 solutions. It is shown that the principle can be extended to other solutions and semiconductors.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.104503