Determination of the gain nonlinearity time constant in 1.3 μm semiconductor lasers

By comparison of the measured K factors (ratio of the damping factor to the square of the resonance frequency) of distributed feedback and Fabry–Perot lasers, it is found that the relaxation time associated with nonlinear gain for 1.3 μm InGaAsP lasers is about 0.1 ps. This short time constant is co...

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Bibliographic Details
Published in:Applied physics letters 1991-01, Vol.58 (3), p.234-236
Main Authors: EOM, J, SU, C. B, RIDEOUT, W, LAUER, R. B, LACOURSE, J. S
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
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Summary:By comparison of the measured K factors (ratio of the damping factor to the square of the resonance frequency) of distributed feedback and Fabry–Perot lasers, it is found that the relaxation time associated with nonlinear gain for 1.3 μm InGaAsP lasers is about 0.1 ps. This short time constant is consistent with spectral hole burning being the dominant process responsible for the nonlinear gain.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.104699