Schottky-limit barrier heights for CO-coated metal clusters on GaAs(110)

This letter discusses band bending induced by the deposition of metal clusters coated with onto GaAs(110). The layer of CO between the metallic clusters and the undisrupted semiconductor simulates a metal-insulator-semiconductor junction. The observed barrier height shows Schottky-limit-like depende...

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Bibliographic Details
Published in:Applied physics letters 1991-06, Vol.58 (24), p.2809-2811
Main Authors: Komeda, T., Stepniak, F., Weaver, J. H.
Format: Article
Language:English
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Summary:This letter discusses band bending induced by the deposition of metal clusters coated with onto GaAs(110). The layer of CO between the metallic clusters and the undisrupted semiconductor simulates a metal-insulator-semiconductor junction. The observed barrier height shows Schottky-limit-like dependence on the work function of the metal.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.104743