Electronic Raman scattering from acceptors and correlation with transport properties in Li-doped ZnSe layers

• Published in: Applied physics letters 1991-06, Vol.58 (23), p.2654-2656
• Main Authors: OLEGO, D. J, MARSHALL, T, CAMMACK, D, SHAHZAD, K, PETRUZZELLO, J
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electron states; Exact sciences and technology; Impurity and defect levels; Physics
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.104798

Electronic Raman scattering (ERS) from holes bound to Li acceptors was studied in ZnSe layers and correlated with the net acceptor concentration NA−ND determined by capacitance versus voltage measurements. The layers were grown by molecular beam epitaxy on GaAs substrates and were doped in situ to NA−ND concentrations ranging from high 1015’s to low 1017’s cm−3. The ERS spectra reveal several transitions between the ground 1S and shallower S and P bound states of the Li acceptors as well as transitions to a continuum of delocalized valence-band states. Values of excitation energies for the bound hydrogenic states and the ionization energy of the acceptors were measured. The strength of the ERS signal normalized to the phonon scattering depends linearly on NA−ND. This relationship can be exploited in contactless characterization of p-type ZnSe.