Correlation of light-induced changes with hydrogen content in hydrogenated amorphous silicon films

By annealing H-rich intrinsic a-Si:H films at 340 °C in a hydrogen atmosphere, we have prepared a series of samples with varying hydrogen content (CH), but essentially constant photoconductivity, Urbach energy, and microstructure. In this way, we have been able to eliminate some of the interfering f...

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Bibliographic Details
Published in:Applied physics letters 1991-06, Vol.58 (23), p.2669-2671
Main Authors: NEVIN, W. A, YAMAGISHI, H, YAMAGUCHI, M, TAWADA, Y
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic transport in condensed matter
Exact sciences and technology
Photoconduction and photovoltaic effects
photodielectric effects
Physics
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Summary:By annealing H-rich intrinsic a-Si:H films at 340 °C in a hydrogen atmosphere, we have prepared a series of samples with varying hydrogen content (CH), but essentially constant photoconductivity, Urbach energy, and microstructure. In this way, we have been able to eliminate some of the interfering factors contributing to the light-induced effect, thus enabling the influence of CH to be determined. A strong correlation is found between the stability and CH, supporting the involvement of hydrogen in the light-induced mechanism.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.104802