Preparation of stable and photoconductive hydrogenated amorphous silicon from a Xe-diluted silane plasma

Photoconductive and stable hydrogenated amorphous silicon thin films, prepared by plasma-enhanced chemical vapor deposition using a Xe-silane mixture at a substrate temperature of 250 °C, did not show any photo-induced degradation of the photoconductivity after 104 min light soaking (air mass-1, 100...

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Bibliographic Details
Published in:Applied physics letters 1991-06, Vol.58 (22), p.2494-2496
Main Authors: MATSUDA, A, MASHIMA, S, HASEZAKI, K, SUZUKI, A, YAMASAKI, S, MCELHENY, P. J
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:Photoconductive and stable hydrogenated amorphous silicon thin films, prepared by plasma-enhanced chemical vapor deposition using a Xe-silane mixture at a substrate temperature of 250 °C, did not show any photo-induced degradation of the photoconductivity after 104 min light soaking (air mass-1, 100 mW/cm2). The network structure of these films is inhomogeneous and includes a large amount of clustered hydrogen as indicated by the low-temperature thermal effusion and the large, broad component in the nuclear magnetic resonance spectrum.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.104854