New application for isothermal capacitance transient spectroscopy : identification of tunneling in semiconductor-insulator interfaces

The GaAs-insulator interface is characterized by deep level transient spectroscopy (DLTS) and isothermal capacitance transient spectroscopy (ICTS). It is demonstrated that while DLTS can only detect transients with temperature-dependent emission rates, ICTS can detect temperature-independent phenome...

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Bibliographic Details
Published in:Applied physics letters 1991-01, Vol.58 (2), p.137-139
Main Authors: PALOURA, E. C, LAGOWSKI, J, GATOS, H. C
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Exact sciences and technology
Physics
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Summary:The GaAs-insulator interface is characterized by deep level transient spectroscopy (DLTS) and isothermal capacitance transient spectroscopy (ICTS). It is demonstrated that while DLTS can only detect transients with temperature-dependent emission rates, ICTS can detect temperature-independent phenomena as well. The GaAs-insulator interface is characterized by two electron traps, with activation energies 0.67 and 0.23 eV, respectively, and a tunneling component that is detected only by ICTS. This tunneling component, which dominates the ICTS spectrum at 80 K
ISSN:0003-6951
1077-3118
DOI:10.1063/1.104952