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Strain-compensated strained-layer superlattices for 1.5 μm wavelength lasers
Strain-compensated strained-layer multiple quantum well structures have been grown by introducing opposite strain into the barrier layers. Such structures show significant improvement in the photoluminescence spectra, i.e., narrower full width half maxima and stronger intensities. Lasers fabricated...
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Published in: | Applied physics letters 1991-05, Vol.58 (18), p.1952-1954 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Strain-compensated strained-layer multiple quantum well structures have been grown by introducing opposite strain into the barrier layers. Such structures show significant improvement in the photoluminescence spectra, i.e., narrower full width half maxima and stronger intensities. Lasers fabricated with such structures have exhibited low current thresholds (12 mA), high quantum efficiencies (28% per facet), which are constant over a wide current range. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.105029 |