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Strain-compensated strained-layer superlattices for 1.5 μm wavelength lasers

Strain-compensated strained-layer multiple quantum well structures have been grown by introducing opposite strain into the barrier layers. Such structures show significant improvement in the photoluminescence spectra, i.e., narrower full width half maxima and stronger intensities. Lasers fabricated...

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Bibliographic Details
Published in:Applied physics letters 1991-05, Vol.58 (18), p.1952-1954
Main Authors: MILLER, B. I, KOREN, U, YOUNG, M. G, CHIEN, M. D
Format: Article
Language:English
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Summary:Strain-compensated strained-layer multiple quantum well structures have been grown by introducing opposite strain into the barrier layers. Such structures show significant improvement in the photoluminescence spectra, i.e., narrower full width half maxima and stronger intensities. Lasers fabricated with such structures have exhibited low current thresholds (12 mA), high quantum efficiencies (28% per facet), which are constant over a wide current range.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.105029