Excellent uniformity and very low (<50 A/cm2) threshold current density strained InGaAs quantum well diode lasers on GaAs substrate

We report the growth and fabrication of InGaAs/GaAs strained quantum well (QW) lasers with a very low threshold current density, Jth, of

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Bibliographic Details
Published in:Applied physics letters 1991-04, Vol.58 (16), p.1704-1706
Main Authors: NARESH CHAND, BECKER, E. E, VAN DER ZIEL, J. P, CHU, S. N. G, DUTTA, N. K
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
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Description
Summary:We report the growth and fabrication of InGaAs/GaAs strained quantum well (QW) lasers with a very low threshold current density, Jth, of
ISSN:0003-6951
1077-3118
DOI:10.1063/1.105114