Molecular beam epitaxy of ZnSe1− x Te x ternary alloys

ZnSe1−xTex ternary alloy has been grown over the entire range of composition by molecular beam epitaxy on GaAs and InP substrates. A precise control of the composition is achieved by growing this material under Zn-rich conditions. For low Te concentrations, However, significant Te surface segregatio...

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Bibliographic Details
Published in:Applied physics letters 1991-04, Vol.58 (15), p.1611-1613
Main Authors: Turco-Sandroff, F. S., Nahory, R. E., Brazil, M. J. S. P., Martin, R. J., Gilchrist, H. L.
Format: Article
Language:English
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Summary:ZnSe1−xTex ternary alloy has been grown over the entire range of composition by molecular beam epitaxy on GaAs and InP substrates. A precise control of the composition is achieved by growing this material under Zn-rich conditions. For low Te concentrations, However, significant Te surface segregation is observed, which may be due to surface energy minimization. The band-gap energy has been measured over the entire range of composition and presents a very strong bowing with a minimum energy of 2.05 eV for a Te concentration of 0.65.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.105141