Raman scattering from In x Ga1− x As/GaAs strained-layer superlattices

Measurements of room-temperature Raman scattering were performed on InxGa1−xAs/GaAs strained-layer superlattices, grown by molecular beam epitaxy, with superlattice periods of 230 Å and In concentration x values of 0.1 and 0.2. We use, for the first time, the ‘‘spatial correlation’’ model as well as...

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Bibliographic Details
Published in:Applied physics letters 1991-04, Vol.58 (14), p.1491-1493
Main Authors: Wu, Chuanyong, Lao, Pudong, Shen, S. C.
Format: Article
Language:English
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Summary:Measurements of room-temperature Raman scattering were performed on InxGa1−xAs/GaAs strained-layer superlattices, grown by molecular beam epitaxy, with superlattice periods of 230 Å and In concentration x values of 0.1 and 0.2. We use, for the first time, the ‘‘spatial correlation’’ model as well as the splitting mechanism of the corresponding Raman peaks to account for the line shape of the Raman peak around 291 cm−1.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.105181