In situ stress measurement of chemical vapor deposited tungsten silicides

Peeling is a serious problem in chemical vapor deposited (CVD) tungsten silicide (WSix). In situ stress measurement during annealing is performed for sputtered and CVD WSix films at temperatures of 25–900 °C. In monosilane reduced CVD WSix, intrinsic stress increases abruptly at 400 °C and reaches a...

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Bibliographic Details
Published in:Applied physics letters 1991-04, Vol.58 (13), p.1425-1427
Main Authors: WASHIDZU, G, HARA, T, MIYAMOTO, T, INOUE, T
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physical properties of thin films, nonelectronic
Physics
Solid surfaces and solid-solid interfaces
Surface energy
thermodynamic properties
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:Peeling is a serious problem in chemical vapor deposited (CVD) tungsten silicide (WSix). In situ stress measurement during annealing is performed for sputtered and CVD WSix films at temperatures of 25–900 °C. In monosilane reduced CVD WSix, intrinsic stress increases abruptly at 400 °C and reaches a maximum of 7.8×108 Pa at 450 °C. However, such abrupt stress changes are not found at low temperatures in sputtered and dichlorosilane reduced CVD films. Abrupt stress change appeared in monosilane WSix at 400–450 °C, which is a cause of peeling during annealing, may be due to the grain growth of hexagonal and tetragonal WSi2 grains.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.105187