370 °C clean for Si molecular beam epitaxy using a HF dip

We describe a new low-temperature clean for Si molecular beam epitaxy. Growth is carried out on Si wafers subjected to an ≊10–60 s clean in a buffered HF solution prior to insertion in the growth chamber. We demonstrate low defect densities (

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Bibliographic Details
Published in:Applied physics letters 1991-08, Vol.59 (6), p.685-687
Main Authors: EAGLESHAM, D. J, HIGASHI, G. S, CERULLO, M
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
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Description
Summary:We describe a new low-temperature clean for Si molecular beam epitaxy. Growth is carried out on Si wafers subjected to an ≊10–60 s clean in a buffered HF solution prior to insertion in the growth chamber. We demonstrate low defect densities (
ISSN:0003-6951
1077-3118
DOI:10.1063/1.105365