Optical and electrical properties of InP/InGaAs grown selectively on SiO2-masked InP

Heterostructures of InGaAs/InP have been grown selectively through windows in SiO2-masked InP substrates using metalorganic molecular beam epitaxy. The structures show high cathodoluminescence efficiency for window sizes down to 5 μm. A significant red shift, consistent with compressive lattice stra...

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Bibliographic Details
Published in:Applied physics letters 1991-07, Vol.59 (4), p.443-445
Main Authors: WANG, Y.-L, FEYGENSON, A, HAMM, R. A, RITTER, D, WEINER, J. S, TEMKIN, H, PANISH, M. B
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
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Summary:Heterostructures of InGaAs/InP have been grown selectively through windows in SiO2-masked InP substrates using metalorganic molecular beam epitaxy. The structures show high cathodoluminescence efficiency for window sizes down to 5 μm. A significant red shift, consistent with compressive lattice strain, and reduced intensity are observed for smaller features. Anomalous growth is observed near the edges of the windows. Selectively grown InGaAs/InP p-n junctions and bipolar transistors exhibit excellent electrical characteristics after removal of 1–2 μm of edge material.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.105457