Over 245 mW 1.3 μm buried ridge stripe laser diodes on n-substrate fabricated by the reactive ion beam etching technique

1.3 μm GaInAsP/InP buried ridge stripe lasers have been developed using the reactive ion beam etching process for the realization of the mesa stripe and two-step metalorganic vapor phase epitaxy technique for the layers growth. A cw output power over 245 mW has been achieved in 500-μm-long lasers wi...

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Bibliographic Details
Published in:Applied physics letters 1991-07, Vol.59 (1), p.22-24
Main Authors: BOUADMA, N, KAZMIERSKI, C, SEMO, J
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
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Summary:1.3 μm GaInAsP/InP buried ridge stripe lasers have been developed using the reactive ion beam etching process for the realization of the mesa stripe and two-step metalorganic vapor phase epitaxy technique for the layers growth. A cw output power over 245 mW has been achieved in 500-μm-long lasers with front and rear facet reflectivities of 5% and 95%, respectively. Transverse-mode stability at high output power (100 mW) has been demonstrated. In addition, high reliability has been shown in preliminary high-power aging experiments.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.105565