Liquid-metal-mediated homoepitaxial film growth of Ge at low temperature

We demonstrate liquid-metal-mediated homoepitaxial crystal growth of Ge on Ge(111) at temperatures in the range of 400–450 °C. Crystal growth proceeds by diffusion of Ge through a liquid layer, followed by precipitation onto the substrate by the vapor-liquid-solid mechanism. The liquid-metal phase a...

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Bibliographic Details
Published in:Applied physics letters 1991-12, Vol.59 (27), p.3586-3588
Main Authors: FULIN XIONG, GANZ, E, LOESER, A. G, GOLOVCHENKO, J. A, SPAEPEN, F
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:We demonstrate liquid-metal-mediated homoepitaxial crystal growth of Ge on Ge(111) at temperatures in the range of 400–450 °C. Crystal growth proceeds by diffusion of Ge through a liquid layer, followed by precipitation onto the substrate by the vapor-liquid-solid mechanism. The liquid-metal phase at the interface is a Au-Ge alloy formed by initial deposition of a thin Au layer above the eutectic temperature. Ge vapor is provided by a molecular-beam evaporator. The resulting films revealed high-crystalline quality by in situ high-energy ion scattering and channeling analysis and ex situ by cross-sectional transmission electron microscopy.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.105640