Photoluminescence characterization of pseudomorphic modulation-doped quantum wells at high carrier sheet densities

A systematic study has been made of the photoluminescence spectra of modulation-doped strained-layer quantum wells at high electron sheet densities. Peaks associated with both the n=1 and n=2 electron subbands are observed, and the relative intensities are shown to be a result of the symmetry proper...

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Bibliographic Details
Published in:Applied physics letters 1991-12, Vol.59 (25), p.3306-3308
Main Authors: BRIERLEY, S. K, HOKE, W. E, LYMAN, P. S, HENDRIKS, H. T
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Surface and interface electron states
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Summary:A systematic study has been made of the photoluminescence spectra of modulation-doped strained-layer quantum wells at high electron sheet densities. Peaks associated with both the n=1 and n=2 electron subbands are observed, and the relative intensities are shown to be a result of the symmetry properties of the quantum wells. It is demonstrated that only the full width half maximum of the n=2 subband peak is useful for characterizing high carrier densities.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.105714