Photoluminescence characterization of pseudomorphic modulation-doped quantum wells at high carrier sheet densities

A systematic study has been made of the photoluminescence spectra of modulation-doped strained-layer quantum wells at high electron sheet densities. Peaks associated with both the n=1 and n=2 electron subbands are observed, and the relative intensities are shown to be a result of the symmetry proper...

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Published in:Applied physics letters 1991-12, Vol.59 (25), p.3306-3308
Main Authors: BRIERLEY, S. K, HOKE, W. E, LYMAN, P. S, HENDRIKS, H. T
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Surface and interface electron states
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cited_by cdi_FETCH-LOGICAL-c320t-338883ad95829a30622e16dd443b55578e98cf6a293916c9fe05b6b68d9b47283
cites cdi_FETCH-LOGICAL-c320t-338883ad95829a30622e16dd443b55578e98cf6a293916c9fe05b6b68d9b47283
container_end_page 3308
container_issue 25
container_start_page 3306
container_title Applied physics letters
container_volume 59
creator BRIERLEY, S. K
HOKE, W. E
LYMAN, P. S
HENDRIKS, H. T
description A systematic study has been made of the photoluminescence spectra of modulation-doped strained-layer quantum wells at high electron sheet densities. Peaks associated with both the n=1 and n=2 electron subbands are observed, and the relative intensities are shown to be a result of the symmetry properties of the quantum wells. It is demonstrated that only the full width half maximum of the n=2 subband peak is useful for characterizing high carrier densities.
doi_str_mv 10.1063/1.105714
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fullrecord <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_105714</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>5184373</sourcerecordid><originalsourceid>FETCH-LOGICAL-c320t-338883ad95829a30622e16dd443b55578e98cf6a293916c9fe05b6b68d9b47283</originalsourceid><addsrcrecordid>eNo9kE1LxDAURYMoOI6CPyELF26qSV-TJksZ_AJBF7ouafJqI21TkxTRX-_oiKvL5R7u4hByytkFZxIu-TZEzas9suKsrgvgXO2TFWMMCqkFPyRHKb1tqygBViQ-9SGHYRn9hMniZJHa3kRjM0b_ZbIPEw0dnRMuLowhzr23dAxuGX63woUZHX1fzJSXkX7gMCRqMu39a0-tidFjpKlHzNThlHz2mI7JQWeGhCd_uSYvN9fPm7vi4fH2fnP1UFgoWS4AlFJgnBaq1AaYLEvk0rmqglYIUSvUynbSlBo0l1Z3yEQrW6mcbqu6VLAm57tfG0NKEbtmjn408bPhrPlx1fBm52qLnu3Q2SRrhi6ayfr0zwuuKqgBvgEdbGpf</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Photoluminescence characterization of pseudomorphic modulation-doped quantum wells at high carrier sheet densities</title><source>AIP Digital Archive</source><creator>BRIERLEY, S. K ; HOKE, W. E ; LYMAN, P. S ; HENDRIKS, H. T</creator><creatorcontrib>BRIERLEY, S. K ; HOKE, W. E ; LYMAN, P. S ; HENDRIKS, H. T</creatorcontrib><description>A systematic study has been made of the photoluminescence spectra of modulation-doped strained-layer quantum wells at high electron sheet densities. Peaks associated with both the n=1 and n=2 electron subbands are observed, and the relative intensities are shown to be a result of the symmetry properties of the quantum wells. It is demonstrated that only the full width half maximum of the n=2 subband peak is useful for characterizing high carrier densities.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.105714</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Exact sciences and technology ; Physics ; Surface and interface electron states</subject><ispartof>Applied physics letters, 1991-12, Vol.59 (25), p.3306-3308</ispartof><rights>1992 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c320t-338883ad95829a30622e16dd443b55578e98cf6a293916c9fe05b6b68d9b47283</citedby><cites>FETCH-LOGICAL-c320t-338883ad95829a30622e16dd443b55578e98cf6a293916c9fe05b6b68d9b47283</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=5184373$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>BRIERLEY, S. K</creatorcontrib><creatorcontrib>HOKE, W. E</creatorcontrib><creatorcontrib>LYMAN, P. S</creatorcontrib><creatorcontrib>HENDRIKS, H. T</creatorcontrib><title>Photoluminescence characterization of pseudomorphic modulation-doped quantum wells at high carrier sheet densities</title><title>Applied physics letters</title><description>A systematic study has been made of the photoluminescence spectra of modulation-doped strained-layer quantum wells at high electron sheet densities. Peaks associated with both the n=1 and n=2 electron subbands are observed, and the relative intensities are shown to be a result of the symmetry properties of the quantum wells. It is demonstrated that only the full width half maximum of the n=2 subband peak is useful for characterizing high carrier densities.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Surface and interface electron states</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNo9kE1LxDAURYMoOI6CPyELF26qSV-TJksZ_AJBF7ouafJqI21TkxTRX-_oiKvL5R7u4hByytkFZxIu-TZEzas9suKsrgvgXO2TFWMMCqkFPyRHKb1tqygBViQ-9SGHYRn9hMniZJHa3kRjM0b_ZbIPEw0dnRMuLowhzr23dAxuGX63woUZHX1fzJSXkX7gMCRqMu39a0-tidFjpKlHzNThlHz2mI7JQWeGhCd_uSYvN9fPm7vi4fH2fnP1UFgoWS4AlFJgnBaq1AaYLEvk0rmqglYIUSvUynbSlBo0l1Z3yEQrW6mcbqu6VLAm57tfG0NKEbtmjn408bPhrPlx1fBm52qLnu3Q2SRrhi6ayfr0zwuuKqgBvgEdbGpf</recordid><startdate>19911216</startdate><enddate>19911216</enddate><creator>BRIERLEY, S. K</creator><creator>HOKE, W. E</creator><creator>LYMAN, P. S</creator><creator>HENDRIKS, H. T</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19911216</creationdate><title>Photoluminescence characterization of pseudomorphic modulation-doped quantum wells at high carrier sheet densities</title><author>BRIERLEY, S. K ; HOKE, W. E ; LYMAN, P. S ; HENDRIKS, H. T</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c320t-338883ad95829a30622e16dd443b55578e98cf6a293916c9fe05b6b68d9b47283</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Surface and interface electron states</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>BRIERLEY, S. K</creatorcontrib><creatorcontrib>HOKE, W. E</creatorcontrib><creatorcontrib>LYMAN, P. S</creatorcontrib><creatorcontrib>HENDRIKS, H. T</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>BRIERLEY, S. K</au><au>HOKE, W. E</au><au>LYMAN, P. S</au><au>HENDRIKS, H. T</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photoluminescence characterization of pseudomorphic modulation-doped quantum wells at high carrier sheet densities</atitle><jtitle>Applied physics letters</jtitle><date>1991-12-16</date><risdate>1991</risdate><volume>59</volume><issue>25</issue><spage>3306</spage><epage>3308</epage><pages>3306-3308</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>A systematic study has been made of the photoluminescence spectra of modulation-doped strained-layer quantum wells at high electron sheet densities. Peaks associated with both the n=1 and n=2 electron subbands are observed, and the relative intensities are shown to be a result of the symmetry properties of the quantum wells. It is demonstrated that only the full width half maximum of the n=2 subband peak is useful for characterizing high carrier densities.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.105714</doi><tpages>3</tpages></addata></record>
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language eng
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subjects Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Surface and interface electron states
title Photoluminescence characterization of pseudomorphic modulation-doped quantum wells at high carrier sheet densities
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T03%3A48%3A03IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Photoluminescence%20characterization%20of%20pseudomorphic%20modulation-doped%20quantum%20wells%20at%20high%20carrier%20sheet%20densities&rft.jtitle=Applied%20physics%20letters&rft.au=BRIERLEY,%20S.%20K&rft.date=1991-12-16&rft.volume=59&rft.issue=25&rft.spage=3306&rft.epage=3308&rft.pages=3306-3308&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.105714&rft_dat=%3Cpascalfrancis_cross%3E5184373%3C/pascalfrancis_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c320t-338883ad95829a30622e16dd443b55578e98cf6a293916c9fe05b6b68d9b47283%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true