Molecular beam epitaxial growth of InAsSb strained layer superlattices. Can nature do it better ?

Molecular beam epitaxial growth of a normally homogeneous InAs0.5Sb0.5 alloy below 430 °C results in its coherent phase separation into platelets of two different alloy compositions with tetragonally distorted crystal lattices. This produces a ‘‘natural’’ strained layer superlattice (n-SLS) with cle...

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Bibliographic Details
Published in:Applied physics letters 1991-12, Vol.59 (25), p.3324-3326
Main Authors: FERGUSON, I. T, NORMAN, A. G, JOYCE, B. A, SEONG, T.-Y, BOOKER, G. R, THOMAS, R. H, PHILLIPS, C. C, STRADLING, R. A
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:Molecular beam epitaxial growth of a normally homogeneous InAs0.5Sb0.5 alloy below 430 °C results in its coherent phase separation into platelets of two different alloy compositions with tetragonally distorted crystal lattices. This produces a ‘‘natural’’ strained layer superlattice (n-SLS) with clearly defined interfaces modulated in the [001] growth direction. A description of the n-SLS growth mode in InAsSb is outlined, and the optical response of a n-SLS structure, which extends to 12.5 μm−considerably further than that of a homogeneous InAs0.5Sb0.5 layer (8.9 μm)−is reported.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.105720