Measurements of Al-AlInAs Schottky barriers prepared in situ by molecular beam epitaxy

Aluminum was deposited in situ on high crystalline quality n-doped AlInAs grown by molecular beam epitaxy. The current versus voltage characteristics yielded an ideality factor better than 1.05. A barrier height of 0.55±0.01 eV was found, as determined from capacitance versus voltage and current ver...

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Bibliographic Details
Published in:Applied physics letters 1992-03, Vol.60 (9), p.1099-1101
Main Authors: GUEISSAZ, F, GAILHANOU, M, HOUDRE, R, ILEGEMS, M
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Surface double layers, schottky barriers, and work functions
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Summary:Aluminum was deposited in situ on high crystalline quality n-doped AlInAs grown by molecular beam epitaxy. The current versus voltage characteristics yielded an ideality factor better than 1.05. A barrier height of 0.55±0.01 eV was found, as determined from capacitance versus voltage and current versus temperature (I-T) measurements. The agreement between the two measurements was excellent. Furthermore, evidence is given here that inhomogeneities of the crystal matrix, as observed by four crystal-six reflection x-ray diffraction, result in anomalous I-T characteristics.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.106456