Sputtering of YBa2Cu3O7−δ/NdAlO3/YBa2Cu3O7−δ trilayers

Epitaxial YBa2Cu3O7−δ/NdAlO3/YBa2Cu3O7−δ-trilayers were grown by sputtering from stoichiometric targets. The YBa2Cu3O7−δ (YBCO) films were deposited by dc-magnetron sputtering. For the NdAlO3 films, rf-magnetron sputtering was used. The individual YBCO films revealed critical-current densities up to...

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Bibliographic Details
Published in:Applied physics letters 1992-06, Vol.60 (26), p.3304-3306
Main Authors: Rauch, W., Behner, H., Gieres, G., Sipos, B., Seeböck, R. J., Eibl, O., Kerner, R., Sölkner, G., Gornik, E.
Format: Article
Language:English
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Summary:Epitaxial YBa2Cu3O7−δ/NdAlO3/YBa2Cu3O7−δ-trilayers were grown by sputtering from stoichiometric targets. The YBa2Cu3O7−δ (YBCO) films were deposited by dc-magnetron sputtering. For the NdAlO3 films, rf-magnetron sputtering was used. The individual YBCO films revealed critical-current densities up to 3×106 A/cm2 at 77 K. The bilayer and trilayer structures were characterized by x-ray diffraction, Rutherford backscattering spectroscopy, and transmission electron microscopy (TEM). The channel yield χmin of the YBCO film on top was 15% for an in situ deposited trilayer. The epitaxial growth of the subsequent layers was proved by cross-sectional TEM. Although the NdAlO3 layer contained misoriented grains, the top YBCO layer grows in single orientation over these areas. Preliminary electrical measurements show that NdAlO3 is a useful insulating dielectric for microelectronic applications.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.106674