Self-consistent scattering matrix calculation of the distribution function in semiconductor devices

The scattering matrix approach is a new technique for solving the Boltzmann equation in devices. We report a self-consistent application of the technique to realistic silicon devices exhibiting strong nonlocal effects. Simulation of a hot-electron, n-i-n diode demonstrates that the new technique eff...

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Bibliographic Details
Published in:Applied physics letters 1992-06, Vol.60 (23), p.2908-2910
Main Authors: STETTLER, M. A, LUNDSTROM, M. S
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Miscellaneous
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:The scattering matrix approach is a new technique for solving the Boltzmann equation in devices. We report a self-consistent application of the technique to realistic silicon devices exhibiting strong nonlocal effects. Simulation of a hot-electron, n-i-n diode demonstrates that the new technique efficiently and accurately reproduces Monte Carlo results without the statistical noise, allowing much tighter convergence with Poisson’s equation.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.106816