Screening effects in (111)B AlGaAs-InGaAs single quantum well heterostructures

A reduction in luminescence decay time and a shift toward higher optical transition energy is observed in response to an increase in photogenerated carrier density for a p-i-n (111)B Al0.15Ga0.85As-In0.055Ga0.945As strained-layer single quantum well heterostructure. These effects, which are attribut...

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Bibliographic Details
Published in:Applied physics letters 1992-05, Vol.60 (21), p.2637-2639
Main Authors: MOISE, T. S, GUIDO, L. J, BARKER, R. C, WHITE, J. O, KOST, A. R
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
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Summary:A reduction in luminescence decay time and a shift toward higher optical transition energy is observed in response to an increase in photogenerated carrier density for a p-i-n (111)B Al0.15Ga0.85As-In0.055Ga0.945As strained-layer single quantum well heterostructure. These effects, which are attributed to free-carrier screening of the strain-induced electric field, are expected to be useful for designing novel optoelectronic devices that exploit the unique electro-optic properties of (111) strained quantum wells.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.106879