Influence of ionized impurities of the linewidth of intersubband transitions in GaAs/GaAlAs quantum wells

In this letter, we report the influence of silicon donors on the linewidth of intersubband transitions 1–2 in GaAs/Ga0.75Al0.25As square quantum wells. We clearly demonstrate that the relative position between the ionized impurities and the center of the quantum wells is a major factor on the linewi...

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Bibliographic Details
Published in:Applied physics letters 1992-04, Vol.60 (17), p.2121-2122
Main Authors: DUPONT, E. B, DELACOURT, D, PAPILLON, D, SCHNELL, J. P, PAPUCHON, M
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
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Summary:In this letter, we report the influence of silicon donors on the linewidth of intersubband transitions 1–2 in GaAs/Ga0.75Al0.25As square quantum wells. We clearly demonstrate that the relative position between the ionized impurities and the center of the quantum wells is a major factor on the linewidth of the mid-infrared (10 μm) transitions. Besides, it is shown that the scattering processes are more influenced by temperature when donors are far from the quantum well (QW).
ISSN:0003-6951
1077-3118
DOI:10.1063/1.107082