Perpendicular electron transport through a two-dimensional electron-gas layer

We analyze the scattering processes of high-energy (approximately 0.3 eV) electrons impinging at normal incidence on a zero-temperature two-dimensional electron gas (2DEG), and derive an expression for the scattering probability. We proceed in calculating the total scattering rate and energy loss of...

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Bibliographic Details
Published in:Applied physics letters 1992-04, Vol.60 (15), p.1881-1883
Main Authors: JANSEN, R.-J. E, FARID, B, KELLY, M. J
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Exact sciences and technology
Physics
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Summary:We analyze the scattering processes of high-energy (approximately 0.3 eV) electrons impinging at normal incidence on a zero-temperature two-dimensional electron gas (2DEG), and derive an expression for the scattering probability. We proceed in calculating the total scattering rate and energy loss of the hot electrons as a function of their energy of incidence. These results are then compared with those of the recent experiments performed on a hot-electron transistor with a 2DEG base. Our calculated base transfer ratio is in good agreement with the measured value.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.107142