Low threshold, 633 nm, single tensile-strained quantum well Ga0.6In0.4P/(Al x Ga1− x )0.5In0.5P laser

Low threshold, 633 nm diode lasers are demonstrated. These devices contain a single, 80 Å, tensile-strained Ga0.6In0.4P quantum well (QW) active region, and Al0.5In0.5P cladding layers, grown by low-pressure organometallic vapor phase epitaxy on misoriented substrates. Operating characteristics are...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1992-04, Vol.60 (16), p.1927-1929
Main Authors: Bour, D. P., Treat, D. W., Thornton, R. L., Paoli, T. L., Bringans, R. D., Krusor, B. S., Geels, R. S., Welch, D. F., Wang, T. Y.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Low threshold, 633 nm diode lasers are demonstrated. These devices contain a single, 80 Å, tensile-strained Ga0.6In0.4P quantum well (QW) active region, and Al0.5In0.5P cladding layers, grown by low-pressure organometallic vapor phase epitaxy on misoriented substrates. Operating characteristics are compared with low-threshold, 680 nm compressively strained Ga0.4In0.6P QW lasers. Although performance is not as good as for the 680 nm devices, the 633 nm lasers have characteristic temperature T0∼60 K and low pulsed threshold current density (400 A/cm2). These improved characteristics are believed due to the incorporation of a single, tensile-strained QW, along with (Al0.6Ga0.4)0.5In0.5P confining layers, which offer increased electron confinement.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.107153