Hole space-charge buildup and evidence for sequential tunneling in p-type double-barrier resonant tunneling devices

Magnetoquantum oscillations in the tunnel current of a p-type double-barrier AlAs/GaAs/AlAs device are used to measure the buildup of hole space charge in the quantum well over a wide range of bias. These measurements demonstrate sequential tunneling of holes. The effective mass for hole tunneling i...

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Bibliographic Details
Published in:Applied physics letters 1992-03, Vol.60 (12), p.1474-1476
Main Authors: HAYDEN, R. K, EAVES, L, HENINI, M, MAUDE, D. K, PORTAL, J. C, HILL, G
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Exact sciences and technology
Physics
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Summary:Magnetoquantum oscillations in the tunnel current of a p-type double-barrier AlAs/GaAs/AlAs device are used to measure the buildup of hole space charge in the quantum well over a wide range of bias. These measurements demonstrate sequential tunneling of holes. The effective mass for hole tunneling is estimated.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.107275