Intervalley scattering in GaAs and InP probed by pulsed far-infrared transmission spectroscopy

The dynamics of photoexcited electrons in GaAs and InP were studied using the transmission of 200-fs pulses of far-infrared radiation in the spectral range 15–100 cm−1. Kinetic traces of the infrared transmission as a function of delay between optical excitation and infrared probe show a probe-limit...

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Bibliographic Details
Published in:Applied physics letters 1992-03, Vol.60 (12), p.1477-1479
Main Authors: SAETA, P. N, FEDERECI, J. F, GREENE, B. I, DYKAAR, D. R
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
Low-field transport and mobility
piezoresistance
Physics
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Summary:The dynamics of photoexcited electrons in GaAs and InP were studied using the transmission of 200-fs pulses of far-infrared radiation in the spectral range 15–100 cm−1. Kinetic traces of the infrared transmission as a function of delay between optical excitation and infrared probe show a probe-limited decrease in transmission followed by a more gradual (0.7–2 ps) drop to a steady value, consistent with the slow return of electrons from high-mass satellite valleys. Infrared transmission spectra, analyzed in the context of a Drude model, reveal density-dependent electron mobilities 3–4 times below equilibrium n-doped values. Electron-hole collisions likely account for the lower mobility.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.107276