Hydrogen coverage during Si growth from SiH4 and Si2H6

Time-of-flight direct recoiling (DR) measurements of surface hydrogen coverage (θH) are made in situ during chemical beam epitaxy growth of Si from Si2H6 on Si(100) as a function of temperature and disilane flux. Temperatures (T) of 300–900 °C and fluxes from 1015 to 1017 molecules cm−2 s−1 are used...

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Bibliographic Details
Published in:Applied physics letters 1992-01, Vol.60 (1), p.53-55
Main Authors: GATES, S. M, KULKARNI, S. K
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface structure and topography
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:Time-of-flight direct recoiling (DR) measurements of surface hydrogen coverage (θH) are made in situ during chemical beam epitaxy growth of Si from Si2H6 on Si(100) as a function of temperature and disilane flux. Temperatures (T) of 300–900 °C and fluxes from 1015 to 1017 molecules cm−2 s−1 are used. Limited data for SiH4 are also presented. Predictions of θH from a steady state kinetic model are compared with the measurements, enabling the reactive sticking probability (S) of Si2H6 to be estimated at T≳500 °C.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.107371