Selective area growth of heterostructure bipolar transistors by metalorganic molecular beam epitaxy

Heterostructure bipolar transistors (HBT) have been grown by selective area epitaxy (SAE) using metalorganic molecular beam epitaxy (MOMBE). dc characteristics, comparable to those for devices grown on unprocessed substrates, were obtained after removal of the edge growth. Data is also presented for...

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Bibliographic Details
Published in:Applied physics letters 1992-08, Vol.61 (5), p.592-594
Main Authors: HAMM, R. A, FEYGENSON, A, RITTER, D, WANG, Y. L, TEMKIN, H, YADVISH, R. D, PANISH, M. B
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:Heterostructure bipolar transistors (HBT) have been grown by selective area epitaxy (SAE) using metalorganic molecular beam epitaxy (MOMBE). dc characteristics, comparable to those for devices grown on unprocessed substrates, were obtained after removal of the edge growth. Data is also presented for devices in which the emitter mesas were regrown by SAE into openings which had been previously defined by photolithography on a structure containing only the collector and base layers. In both cases we use an in situ cleaning process consisting of an Ar ion beam sputtering and Cl2 etching. This step results in significantly improved junction quality.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.107846