Quarter-micrometer GaAs schottky barrier diode with high video responsivity at 118 μm

A quarter-micrometer diameter Schottky barrier mixer diode has been fabricated on n+ GaAs using electron beam lithography and reactive ion etching (RIE). The anodes were formed using a Pt/Au electroplate technique. The diode zero-bias capacitance of 0.25 fF and series resistance of about 25 Ω, measu...

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Published in:Applied physics letters 1992-07, Vol.61 (3), p.294-296
Main Authors: PEATMAN, W. C. B, WOOD, P. A. D, PORTERFIELD, D, CROWE, T. W, ROOKS, M. J
Format: Article
Language:English
Subjects:
Applied sciences
Circuit properties
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
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cited_by cdi_FETCH-LOGICAL-c254t-91acff3a43399196a701535fadd8866916ca0d16fdc15322ce63290dd84205563
cites cdi_FETCH-LOGICAL-c254t-91acff3a43399196a701535fadd8866916ca0d16fdc15322ce63290dd84205563
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container_issue 3
container_start_page 294
container_title Applied physics letters
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creator PEATMAN, W. C. B
WOOD, P. A. D
PORTERFIELD, D
CROWE, T. W
ROOKS, M. J
description A quarter-micrometer diameter Schottky barrier mixer diode has been fabricated on n+ GaAs using electron beam lithography and reactive ion etching (RIE). The anodes were formed using a Pt/Au electroplate technique. The diode zero-bias capacitance of 0.25 fF and series resistance of about 25 Ω, measured at dc, correspond to a ‘‘figure-of-merit’’ cuttoff frequency of about 25 THz. The video responsivity at 118 μm (2540 GHz) was as high as 200 V/W, over three times higher than the best previously reported. The design, fabrication, and evaluation of this diode is described.
doi_str_mv 10.1063/1.107944
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subjects Applied sciences
Circuit properties
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
title Quarter-micrometer GaAs schottky barrier diode with high video responsivity at 118 μm
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