144 °C operation of 1.3 μm InGaAsP vertical cavity lasers on GaAs substrates

We report lasing at temperatures as high as 144 °C in long-wavelength InGaAsP vertical cavity lasers. The devices are optically pumped and employ a novel cavity design using GaAs/AlAs quarter-wavelength stacks for one mirror. The characteristic temperature T0 of the device increases from 42 K at roo...

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Bibliographic Details
Published in:Applied physics letters 1992-12, Vol.61 (26), p.3095-3097
Main Authors: DUDLEY, J. J, ISHIKAWA, M, BABIC, D. I, MILLER, B. I, MIRIN, R, JIANG, W. B, BOWERS, J. E, HU, E. L
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
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Summary:We report lasing at temperatures as high as 144 °C in long-wavelength InGaAsP vertical cavity lasers. The devices are optically pumped and employ a novel cavity design using GaAs/AlAs quarter-wavelength stacks for one mirror. The characteristic temperature T0 of the device increases from 42 K at room temperature to 81 K at temperatures above 80 °C as the gain peak moves into resonance with the longer wavelength cavity mode.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.107972