Smooth, low-bias plasma etching of InP in microwave Cl2/CH4/H2 mixtures

Electron cyclotron resonance microwave (2.45 GHz) discharges of Cl2/CH4/H2 with low additional dc biases (−80 to −150 V) on the sample are shown to provide smooth, anisotropic dry etching of InP at ∼150 °C. Rates of 2500 Å min−1 are obtained at a pressure of 0.5 mTorr and ∼80 V dc bias. SiO2 masks s...

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Bibliographic Details
Published in:Applied physics letters 1992-12, Vol.61 (24), p.2899-2901
Main Authors: CONSTANTINE, C, BARRATT, C, PEARTON, S. J, REN, F, LOTHIAN, J. R
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Mechanical and acoustical properties
adhesion
Physics
Solid surfaces and solid-solid interfaces
Solid-fluid interfaces
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:Electron cyclotron resonance microwave (2.45 GHz) discharges of Cl2/CH4/H2 with low additional dc biases (−80 to −150 V) on the sample are shown to provide smooth, anisotropic dry etching of InP at ∼150 °C. Rates of 2500 Å min−1 are obtained at a pressure of 0.5 mTorr and ∼80 V dc bias. SiO2 masks show no discernible erosion under these conditions, yielding a process that is extremely well suited for laser mesa fabrication. The CH4 addition promotes the anisotropy of the etching by a sidewall polymer mechanism, while the H2 addition significantly enhances the etch rate at low pressure.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.108042