Atmospheric photoassisted chemical vapor deposition of Si using ultraviolet-light irradiated H2 carrier gas and nonexcited SiH2Cl2

We have proposed a new photoassisted chemical vapor deposition (photo-CVD) process of Si, in which only a hydrogen carrier gas is excited by UV light from low-pressure Hg lamps and a reactant gas of SiH2Cl2 is not irradiated at all. In this type of photo-CVD, it is found that (1) the number of pyram...

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Bibliographic Details
Published in:Applied physics letters 1992-12, Vol.61 (24), p.2881-2883
Main Authors: MOTAHARUL KABIR MAZUMDER, TAKAKUWA, Y, MIYAMOTO, N
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:We have proposed a new photoassisted chemical vapor deposition (photo-CVD) process of Si, in which only a hydrogen carrier gas is excited by UV light from low-pressure Hg lamps and a reactant gas of SiH2Cl2 is not irradiated at all. In this type of photo-CVD, it is found that (1) the number of pyramidal hillocks on orientation-just surfaces is drastically suppressed, (2) the number of etch pits, corresponding to the stacking fault and the precipitation of contaminants, is also decreased, (3) the growth rate is significantly enhanced, and (4) the surface roughness is decreased. In particular it should be emphasized that these effects are more apparent at atmospheric pressure. It is suggested that the UV-light irradiated hydrogen plays an important role in removing chlorine atoms adsorbed on the surface.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.108064