Electroabsorption modulator based on Wannier-Stark localization with 20 GHz/V efficiency

We report on a ridge-waveguide modulator based on Wannier–Stark localization in an InGaAs/InAlAs superlattice. Anisotropic absorption is measured and efficient modulation is obtained in the low-field domain and in the high-field domain with TE-polarized light. The device exhibits outstanding HF char...

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Bibliographic Details
Published in:Applied physics letters 1992-12, Vol.61 (23), p.2773-2775
Main Authors: DEVAUX, F, BIGAN, E, ALLOVON, M, HARMAND, J.-C, HUET, F, CARRE, M, LANDREAU, J
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Optical elements, devices, and systems
Optical processors, correlators, and modulators
Optics
Physics
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Summary:We report on a ridge-waveguide modulator based on Wannier–Stark localization in an InGaAs/InAlAs superlattice. Anisotropic absorption is measured and efficient modulation is obtained in the low-field domain and in the high-field domain with TE-polarized light. The device exhibits outstanding HF characteristics: in terms of bandwidth-to-drive-voltage ratio, we find that the Wannier–Stark localization is far more efficient than the quantum Stark effect.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.108086