InGaAs/InP hot electron transistors grown by chemical beam epitaxy

In this letter, we report on the dc performance of chemical beam epitaxy grown InGaAs/InP hot electron transistors (HETs). The highest observed differential β (dIC/dIB) is over 100. The HETs have Pd/Ge/Ti/Al shallow ohmic base contacts with diffusion lengths less than 300 Å. Furthermore, we also dem...

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Bibliographic Details
Published in:Applied physics letters 1992-07, Vol.61 (2), p.189-191, Article 189
Main Authors: CHEN, W. L, SUN, J. P, HADDAD, G. I, SHERWIN, M. E, MUNNS, G. O, EAST, J. R, MAINS, R. K
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:In this letter, we report on the dc performance of chemical beam epitaxy grown InGaAs/InP hot electron transistors (HETs). The highest observed differential β (dIC/dIB) is over 100. The HETs have Pd/Ge/Ti/Al shallow ohmic base contacts with diffusion lengths less than 300 Å. Furthermore, we also demonstrated ballistic transport of electrons in an InGaAs/InP HET by obtaining an energy distribution of electrons with ∼60 meV full width at half maximum. The measured conduction band discontinuity of InGaAs/InP is 250.3 meV, which is 39.8% of the band gap difference.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.108214