Critical dislocation density separating different regimes of diffusion transport in metal-semiconductor systems

The diffusion transport of metal impurities in semiconductors is considered. Critical magnitudes of dislocation density are obtained at which the diffusion kinetics change from the interstitial impurity regime of diffusion transport to the self-interstitial regime or the vacancy regime. It is predic...

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Bibliographic Details
Published in:Applied physics letters 1993-03, Vol.62 (9), p.1012-1013
Main Author: VAISLEIB, A. V
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface structure and topography
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:The diffusion transport of metal impurities in semiconductors is considered. Critical magnitudes of dislocation density are obtained at which the diffusion kinetics change from the interstitial impurity regime of diffusion transport to the self-interstitial regime or the vacancy regime. It is predicted that the critical density of dislocations decreases with increasing temperature.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.108565