Ellipsometric study of Si0.5Ge0.5/Si strained-layer superlattices

We present an ellipsometric study of two Si0.5Ge0.5/Si strained-layer superlattices grown by MBE at low temperature (500 °C), and compare our results with x-ray diffraction (XRD) estimates. Excellent agreement is obtained between target values, XRD, and ellipsometry when one of two available SixGe1−...

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Bibliographic Details
Published in:Applied physics letters 1993-04, Vol.62 (14), p.1626-1628
Main Authors: SIEG, R. M, ALTEROVITZ, S. A, CROKE, E. T, HARRELL, M. J
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:We present an ellipsometric study of two Si0.5Ge0.5/Si strained-layer superlattices grown by MBE at low temperature (500 °C), and compare our results with x-ray diffraction (XRD) estimates. Excellent agreement is obtained between target values, XRD, and ellipsometry when one of two available SixGe1−x databases is used. We show that ellipsometry can be used to nondestructively determine the number of superlattice periods, layer thicknesses, SixGe1−x composition, and oxide thickness without resorting to additional sources of information. We also note that we do not observe any strain effect on the E1 critical point.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.108607