All-optical, high contrast GaAlInAs multiple quantum well asymmetric reflection modulator at 1.3 μm

A high contrast, low intensity GaAlInAs/AlInAs multiple quantum well asymmetric Fabry–Perot reflection modulator for operation at 1.3 μm has been demonstrated. The reflection modulator takes advantage of the large absorptive and refractive nonlinearities associated with saturating the heavy-hole exc...

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Bibliographic Details
Published in:Applied physics letters 1993-03, Vol.62 (13), p.1550-1552
Main Authors: KROL, M. F, OHTSUKI, T, KHITROVA, G, BONCEK, R. K, MCGINNIS, B. P, GIBBS, H. M, PEYGHAMBARIAN, N
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Optical elements, devices, and systems
Optical processors, correlators, and modulators
Optics
Physics
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Summary:A high contrast, low intensity GaAlInAs/AlInAs multiple quantum well asymmetric Fabry–Perot reflection modulator for operation at 1.3 μm has been demonstrated. The reflection modulator takes advantage of the large absorptive and refractive nonlinearities associated with saturating the heavy-hole exciton resonance. We achieve an on/off contrast ratio in excess of 1000:1 (30 dB) and an insertion loss of 2.2 dB at a pump intensity of 30 kW/cm2, corresponding to a carrier density of 4.5×1017 cm−3. The modulator was demonstrated to have a large operating bandwidth, achieving an on/off contrast ratio of greater than 100:1 over a 5 nm optical band. The operating speed of the modulator was measured and found to approach 1 GHz.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.108637