Changes in electrical device characteristics during the in situ formation of dislocations

By adding electrical connections to a specimen heating holder for a transmission electron microscope (TEM), we have measured the characteristics of electronic devices, such as diodes, while they remain under observation. We have made TEM specimens from metastable GeSi/Si p-n junction diodes and intr...

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Bibliographic Details
Published in:Applied physics letters 1993-03, Vol.62 (12), p.1426-1428
Main Authors: ROSS, F. M, HULL, R, BAHNCK, D, BEAN, J. C, PETICOLAS, L. J, KING, C. A
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Testing, measurement, noise and reliability
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Summary:By adding electrical connections to a specimen heating holder for a transmission electron microscope (TEM), we have measured the characteristics of electronic devices, such as diodes, while they remain under observation. We have made TEM specimens from metastable GeSi/Si p-n junction diodes and introduced dislocations by heating in situ. We describe the changes in the electrical properties of these devices as dislocations form. We find that a generation-recombination process does not explain our results and instead, suggest a model based on the creation of point defects or the diffusion of metals during the formation of dislocations.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.108649