Generation of dc substrate current in metal-oxide-semiconductor structures under an oscillating gate voltage

The present letter reports the results of the experimental measurements of the dc substrate current in metal-oxide-semiconductor (MOS) structures operated under a gate-voltage signal oscillating under depletion limits. A new component has been detected in this current whose direction of flow is inde...

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Bibliographic Details
Published in:Applied physics letters 1993-01, Vol.62 (1), p.69-71
Main Authors: MITRA, V, BENFDILA, A, BOUDERBALA, R, BENTARZI, H
Format: Article
Language:English
Subjects:
Applied sciences
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:The present letter reports the results of the experimental measurements of the dc substrate current in metal-oxide-semiconductor (MOS) structures operated under a gate-voltage signal oscillating under depletion limits. A new component has been detected in this current whose direction of flow is independent of the polarity of the applied gate voltage as well as the nature of the MOS structure. Its magnitude shows strong dependence on the frequency of the applied gate voltage, giving rise in general to three prominent peaks in the current-frequency curve. Arguments are given in support of the view that this current has its origin from the charging and discharging of the surface-states existing on the Si-SiO2 interface under non-steady-state emission.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.108822