Measurement of conduction band offsets through Schottky diode transport measurements

The charge transport properties of the Schottky diode structure Au/In0.52Al0.48As/In0.53Ga0.47As have been computer modeled by employing Poisson’s equation and the thermionic emission theory. From the unusual form of the current-voltage (I-V) relationship, it was predicted that the conduction band o...

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Bibliographic Details
Published in:Applied physics letters 1993-01, Vol.62 (3), p.291-293
Main Authors: MORRIS, I. L, WILLIAMS, R. H, DAVIES, J. I, CLARKE, G. J
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Surface and interface electron states
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Summary:The charge transport properties of the Schottky diode structure Au/In0.52Al0.48As/In0.53Ga0.47As have been computer modeled by employing Poisson’s equation and the thermionic emission theory. From the unusual form of the current-voltage (I-V) relationship, it was predicted that the conduction band offset of the lattice matched InAlAs/InGaAs system could be measured. Experimental results confirm the form of the I-V relationship and an excellent estimate of the conduction band offset, ΔEc=0.53 eV, was obtained. Further low temperature I-V measurements are provided as confirmation of our conduction band profiles.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.108994