Luminescence efficiency of near-surface quantum wells before and after ion-gun hydrogenation

We have studied the effects of the proximity of a bare Al0.3Ga0.7As surface on the luminescence of an underlying GaAs quantum well (QW) before and after hydrogenation. The mechanism which is affected by H is tunneling to surface states through the surface barrier. Its thickness was varied by wet etc...

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Bibliographic Details
Published in:Applied physics letters 1993-05, Vol.62 (21), p.2697-2699
Main Authors: YING-LAN CHANG, I-HSING TAN, YONG-HANG ZHANG, MERZ, J, HU, E, FROVA, A, EMILIANI, V
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
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Summary:We have studied the effects of the proximity of a bare Al0.3Ga0.7As surface on the luminescence of an underlying GaAs quantum well (QW) before and after hydrogenation. The mechanism which is affected by H is tunneling to surface states through the surface barrier. Its thickness was varied by wet etching from 60 to 350 Å. Our experiments reveal that the degradation of luminescence efficiency from the QW is dependent on the surface barrier thickness and the excitation energy used in the photoluminescence measurements. A complete recovery or even further enhancement of luminescence efficiency was observed in the near-surface QW after low-energy ion-beam hydrogenation, even at room temperature.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.109235