Atomic layer epitaxy of GaAs with a 2 μm/h growth rate

• Published in: Applied physics letters 1993-05, Vol.62 (19), p.2378-2380
• Main Authors: DIP, A, ELDALLAL, G. M, COLTER, P. C, HAYAFUJI, N, BEDAIR, S. M
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Solid surfaces and solid-solid interfaces; Surface and interface dynamics and vibrations; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.109370

Atomic layer epitaxy (ALE) of GaAs with a growth rate as high as 2 μm/h was achieved in a specially designed reactor based on the rotating susceptor concept. High deposition rates are made possible by a unique partition system that permits rapid rotation of substrates between simultaneous streams of columns III and V reactant gases. Mixing of the gas streams at high rotational speeds is avoided by the gas shearing effect provided by the partition system. Background carbon levels in the GaAs films with high growth rates varied from mid 1017 cm−3 at 650 °C to mid 1018 cm−3 at 550 °C. When the growth rate was reduced to 0.3 μm/h, carbon background doping in the 1015 cm−3 was achieved.