8×18 top emitting independently addressable surface emitting laser arrays with uniform threshold current and low threshold voltage

Fabrication of 8×18 independently addressable vertical cavity surface emitting laser arrays (VC-SELA) with uniform threshold current, threshold voltage, and high optical output power is reported. The top surface emitting array contains GaAs multiquantum well active regions and exhibits uniform chara...

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Bibliographic Details
Published in:Applied physics letters 1993-04, Vol.62 (15), p.1718-1720
Main Authors: VAKHSHOORI, D, WYNN, J. D, ZYDZIK, G. J, LEIBENGUTH, R. E
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
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Summary:Fabrication of 8×18 independently addressable vertical cavity surface emitting laser arrays (VC-SELA) with uniform threshold current, threshold voltage, and high optical output power is reported. The top surface emitting array contains GaAs multiquantum well active regions and exhibits uniform characteristics over a 4×9 mm2 area. The cw threshold current is ≊4.2∓0.2 mA, the threshold voltage is 2.65∓0.1 V, and the output optical power is greater than 2 mW for the individual elements of the array. To realize these large VC-SELAs, a novel ion implantation mask fabrication was developed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.109584