Growth of undoped polycrystalline Si by an ultrahigh vacuum chemical vapor deposition system

Deposition of undoped polycrystalline-silicon (poly-Si) films on SiO2 using an ultrahigh vacuum chemical vapor deposition system was investigated. Poly-Si films with high crystallinity were obtained at a temperature as low as 525 °C. The layer growth process was found to proceed with an activation e...

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Bibliographic Details
Published in:Applied physics letters 1993-09, Vol.63 (10), p.1351-1353
Main Authors: HORNG-CHIH LIN, HSIAO-YI LIN, CHUN-YEN CHANG, TAN-FU LEI, WANG, P. J, CHIH-YEH CHAO
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
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Summary:Deposition of undoped polycrystalline-silicon (poly-Si) films on SiO2 using an ultrahigh vacuum chemical vapor deposition system was investigated. Poly-Si films with high crystallinity were obtained at a temperature as low as 525 °C. The layer growth process was found to proceed with an activation energy of 44±2 kcal/mol, and is dominated by the desorption rate of surface-bonded hydrogen atoms. An incubation time was observed prior to the film deposition. This incubation period increased with decreasing growth temperature, resulting from slower nucleation and growth rates at lower temperatures.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.109674